Open AccessA 160×120 Light‐Adaptive CMOS Vision Chip for Edge Detection Based on a Retinal Structure Using a Saturating Resistive Network
Author(s) -
Kong JaeSung,
Kim SangHeon,
Sung DongKyu,
Shin JangKyoo
Publication year - 2007
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.07.0106.0214
Subject(s) - resistive touchscreen , cmos , enhanced data rates for gsm evolution , chip , edge detection , electronic circuit , electronic engineering , pixel , image sensor , computer science , engineering , artificial intelligence , electrical engineering , image processing , computer vision , image (mathematics)
We designed and fabricated a vision chip for edge detection with a 160×120 pixel array by using 0.35 µm standard complementary metal‐oxide‐semiconductor (CMOS) technology. The designed vision chip is based on a retinal structure with a resistive network to improve the speed of operation. To improve the quality of final edge images, we applied a saturating resistive circuit to the resistive network. The light‐adaptation mechanism of the edge detection circuit was quantitatively analyzed using a simple model of the saturating resistive element. To verify improvement, we compared the simulation results of the proposed circuit to the results of previous circuits.