Open AccessA Simple Model Parameter Extraction Methodology for an On‐Chip Spiral Inductor
Author(s) -
Oh NamJin,
Lee SangGug
Publication year - 2006
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.06.0205.0056
Subject(s) - inductor , equivalent series resistance , inductance , electronic engineering , cmos , extraction (chemistry) , capacitance , chip , skin effect , q factor , engineering , electrical engineering , physics , resonator , chemistry , electrode , chromatography , quantum mechanics , voltage
In this letter, a simple model parameter extraction methodology for an on‐chip spiral inductor is proposed based on a wide‐band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide‐band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using 0.18 µm CMOS technology.