Open AccessTemperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
Author(s) -
Park Sahnggi,
Sim Eundeok,
Park JeongWoo,
Sim JaeSik,
Song HyunWoo,
Oh Su Hwan,
Baek Yongsoon
Publication year - 2006
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.06.0105.0250
Subject(s) - photodiode , dark current , current (fluid) , materials science , optoelectronics , junction temperature , voltage , quantum efficiency , thermal , facet (psychology) , electrical engineering , photodetector , physics , engineering , psychology , social psychology , personality , meteorology , big five personality traits
A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.