Open AccessStability of an Amorphous Silicon Oscillator
Author(s) -
Bae Byung Seong,
Choi JaeWon,
Kim SeHwan,
Oh JaeHwan,
Jang Jin
Publication year - 2006
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.06.0105.0104
Subject(s) - vackář oscillator , amorphous silicon , voltage controlled oscillator , oscillation (cell signaling) , materials science , variable frequency oscillator , rc oscillator , transistor , optoelectronics , pierce oscillator , electrical engineering , amorphous solid , silicon , negative resistance , colpitts oscillator , radio frequency identification , delay line oscillator , electronic engineering , voltage , engineering , computer science , chemistry , crystalline silicon , biochemistry , organic chemistry , computer security
An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low‐end radio frequency identification (RFID). Since a low‐end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.