Open AccessA Single Transistor‐Level Direct‐Conversion Mixer for Low‐Voltage Low‐Power Multi‐band Radios
Author(s) -
Choi Byoung Gun,
Hyun SeokBong,
Tak GeumYoung,
Lee HeeTae,
Park SeongSu,
Park Chul Soon
Publication year - 2005
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.05.0905.0009
Subject(s) - frequency mixer , cmos , transistor , low voltage , electrical engineering , electronic engineering , topology (electrical circuits) , voltage , electronic mixer , engineering , wideband , radio frequency , power (physics) , chip , materials science , harmonic mixer , physics , quantum mechanics , local oscillator
A CMOS direct‐conversion mixer with a single transistor‐level topology is proposed in this paper. Since the single transistor‐level topology needs smaller supply voltage than the conventional Gilbert‐cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system‐on‐a‐chip (SoC). The proposed direct‐conversion mixer is designed for the multi‐band ultra‐wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and −10 dBm, respectively, with multi‐band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.
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