Open AccessUltra Thin Film Encapsulation of Organic Light Emitting Diode on a Plastic Substrate
Author(s) -
Park SangHee Ko,
Oh Jiyoung,
Hwang ChiSun,
Lee JeongIk,
Yang Yong Suk,
Chu Hye Yong,
Kang KwangYong
Publication year - 2005
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.05.0905.0006
Subject(s) - oled , materials science , plasma enhanced chemical vapor deposition , atomic layer deposition , substrate (aquarium) , optoelectronics , layer (electronics) , chemical vapor deposition , diode , nanotechnology , oceanography , geology
We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm AlO x film on both sides of the PES film gave a water vapor transition rate (WVTR) of 0.062 g/m 2 /day (@38°C, 100% R.H.). Further, the double layer of 200 nm SiNx film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm AlOx film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance (1300 cd/m 2 ) was 260 hours for the OLED encapsulated with 100 nm of PECVD‐deposited SiNx and 30 nm of ALD‐deposited AlO x .