Open AccessLow‐Temperature Growth of SiO 2 Films by Plasma‐Enhanced Atomic Layer Deposition
Author(s) -
Lim Jung Wook,
Yun Sun Jin,
Lee Jin Ho
Publication year - 2005
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.05.0204.0023
Subject(s) - atomic layer deposition , materials science , deposition (geology) , dielectric , silicon , plasma , limiting , growth rate , analytical chemistry (journal) , layer (electronics) , silicon dioxide , nanotechnology , optoelectronics , chemistry , composite material , environmental chemistry , mechanical engineering , paleontology , physics , geometry , mathematics , quantum mechanics , sediment , engineering , biology
Silicon dioxide (SiO 2 ) films prepared by plasma‐enhanced atomic‐layer deposition were successfully grown at temperatures of 100 to 250 °C, showing self‐limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO 2 films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO 2 film grown at 250 °C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.