Open AccessA 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems
Author(s) -
Kang Dong Min,
Hong Ju Yeon,
Shim Jae Yeob,
Lee JinHee,
Yoon HyungSup,
Lee Kyung Ho
Publication year - 2005
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.05.0104.0141
Subject(s) - monolithic microwave integrated circuit , amplifier , chip , electrical engineering , materials science , frequency multiplier , chipset , transistor , optoelectronics , engineering , cmos , voltage
A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of −16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band.
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