Open AccessAn X‐Band Carbon‐Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator
Author(s) -
Kim YoungGi,
Kim ChangWoo,
Kim SeongIl,
Min ByoungGue,
Lee JongMin,
Lee Kyung Ho
Publication year - 2005
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.05.0104.0009
Subject(s) - heterojunction bipolar transistor , optoelectronics , bipolar junction transistor , materials science , phase noise , monolithic microwave integrated circuit , vackář oscillator , electrical engineering , diode , transistor , variable frequency oscillator , colpitts oscillator , local oscillator , amplifier , voltage , engineering , cmos
This paper addresses a fully‐integrated low phase noise X‐band oscillator fabricated using a carbon‐doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves −127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X‐band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a 0.8 mm × 0.8 mm die area.