Single‐Electron Pass‐Transistor Logic with Multiple Tunnel Junctions and Its Hybrid Circuit with MOSFETs

To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single‐electron pass‐transistor logic circuit employing a multiple‐tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single‐electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3‐MTJ inverter circuit is simulated at 15 K with parameters C g =C T =C clk =1 aF, R T =5 MΩ, V clk =40 mV, and V in =20 mV. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ‐SETD logic is successfully translated to the voltage state logic.