Open AccessSingle‐Electron Pass‐Transistor Logic with Multiple Tunnel Junctions and Its Hybrid Circuit with MOSFETs
Author(s) -
Cho YoungKyun,
Jeong YoonHa
Publication year - 2004
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.04.0204.0022
Subject(s) - inverter , transistor , mosfet , quantum tunnelling , electrical engineering , materials science , logic gate , voltage , optoelectronics , tunnel junction , electron , electronic circuit , junction temperature , electronic engineering , engineering , physics , thermal , quantum mechanics , meteorology
To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single‐electron pass‐transistor logic circuit employing a multiple‐tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single‐electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3‐MTJ inverter circuit is simulated at 15 K with parameters C g =C T =C clk =1 aF, R T =5 MΩ, V clk =40 mV, and V in =20 mV. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ‐SETD logic is successfully translated to the voltage state logic.