Open AccessFabrication and Characteristics of an' InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC
Author(s) -
Kim Hong Seung,
Kim Hye Jin,
Hong Sun Eui,
Jung Dong Yun,
Nam Eunsoo
Publication year - 2004
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.04.0203.0018
Subject(s) - heterojunction bipolar transistor , materials science , optoelectronics , fabrication , passivation , heterojunction , photodiode , layer (electronics) , indium phosphide , bipolar junction transistor , transistor , gallium arsenide , electrical engineering , voltage , nanotechnology , engineering , medicine , alternative medicine , pathology
We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p‐i‐n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter‐wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around 3 µm. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The F t and F max of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.