Open AccessSelf‐Assembled InAs Quantum Dots on InP(001) for Long‐Wavelength Laser Applications
Author(s) -
Kim Jin Soo,
Lee Jin Hong,
Hong Sung Ui,
Kwack HoSang,
Lee Chul Wook,
Oh Dae Kon
Publication year - 2004
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.04.0104.0028
Subject(s) - lasing threshold , materials science , quantum dot , optoelectronics , photoluminescence , laser , molecular beam epitaxy , transmission electron microscopy , wavelength , quantum dot laser , epitaxy , semiconductor laser theory , optics , nanotechnology , semiconductor , physics , layer (electronics)
Self‐assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid‐source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 µm at room temperature from uncoated QD lasers based on the InAlGaAs‐InAlAs material system on the InP (001). The lasing wavelengths of the ridge‐waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.