Open AccessApplication of GaAs Discrete p‐HEMTs in Low Cost Phase Shifters and QPSK Modulators
Author(s) -
Kamenopolsky Stanimir D.
Publication year - 2004
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.04.0103.0143
Subject(s) - monolithic microwave integrated circuit , phase shift keying , phase shift module , high electron mobility transistor , cmos , electronic engineering , engineering , electrical engineering , microwave , transistor , insertion loss , telecommunications , amplifier , bit error rate , voltage , channel (broadcasting)
The application of a discrete pseudomorphic high electron mobility transistor (p‐HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p‐i‐n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p‐HEMT characterization and modeling in switching mode as well as the development of a low‐cost four‐bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.