Open AccessAmorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC‐Si 3 N 4 Mixed Target
Author(s) -
Park NaeMan,
Kim Sang Hyeob,
Sung Gun Yong
Publication year - 2004
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.04.0103.0054
Subject(s) - materials science , amorphous solid , pulsed laser deposition , deposition (geology) , substrate (aquarium) , stoichiometry , mixing (physics) , silicon , homogeneous , silicon nitride , nitride , amorphous carbon , carbon fibers , carbon nitride , laser , phase (matter) , chemical engineering , optoelectronics , analytical chemistry (journal) , thin film , nanotechnology , composite material , optics , crystallography , composite number , layer (electronics) , chemistry , oceanography , engineering , biology , paleontology , biochemistry , quantum mechanics , photocatalysis , thermodynamics , catalysis , physics , organic chemistry , sediment , geology , chromatography
We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and Si 3 N 4 powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target‐to‐substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30 ~ 70 wt.% SiC in the target to be an intermediate phase of SiC and SiNx. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target‐to‐substrate distance.