Open AccessTrenched‐Sinker LDMOSFET (TS‐LDMOS) Structure for 2 GHz Power Amplifiers
Author(s) -
Kim Cheon Soo,
Kim Sung Do,
Park MunYang,
Yu HyunKyu
Publication year - 2003
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.03.0102.0317
Subject(s) - ldmos , amplifier , materials science , electrical engineering , rf power amplifier , optoelectronics , power (physics) , trench , power added efficiency , engineering , voltage , breakdown voltage , cmos , layer (electronics) , physics , quantum mechanics , composite material
This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below −40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.