Open AccessDC and RF Characteristics of Si 0 . 8 Ge 0 . 2 pMOSFETs: Enhanced Operation Speed and Low 1/f Noise
Author(s) -
Song YoungJoo,
Shim KyuHwan,
Kang JinYoung,
Cho KyoungIk
Publication year - 2003
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.03.0102.0301
Subject(s) - materials science , mosfet , optoelectronics , noise (video) , field effect transistor , transistor , electronic engineering , electrical engineering , computer science , engineering , voltage , artificial intelligence , image (mathematics)
This paper reports on our investigation of DC and RF characteristics of p‐channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained Si 0.8 Ge 0.2 channel. Because of enhanced hole mobility in the Si 0.8 Ge 0.2 buried layer, the Si 0.8 Ge 0.2 pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the Si 0.8 Ge 0.2 pMOSFET was much lower than that in the all‐Si counterpart, regardless of gate‐oxide degradation by electrical stress. These results suggest that the Si 0.8 Ge 0.2 pMOSFET is suitable for RF applications that require high speed and low 1/f noise.