Open AccessBreakdown Voltage Improvement of p‐LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications
Author(s) -
Roh Tae Moon,
Lee Dae Woo,
Yang Yil Suk,
Koo Jin Gun,
Kim Jongdae
Publication year - 2002
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.02.0202.0402
Subject(s) - breakdown voltage , materials science , voltage , electrical engineering , optoelectronics , power mosfet , high voltage , channel (broadcasting) , mosfet , engineering , transistor
We investigated the electrical characteristics of p‐channel double‐diffused MOSFETs (p‐LDMOSFETs) with an uneven racetrack source (URS) and a conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p‐LDMOSFET with the URS in off‐state was nearly the same as the p‐LDMOSFET with the CRS. However, the breakdown voltage of the p‐LDMOSFET with the URS in on‐state was about 30% higher than that of the p‐LDMOSFET with the CRS, while the saturated drain current of the p‐LDMOSFET with the URS was only about 4% lower than that of the p‐LDMOSFET with the CRS.