Open AccessGreen‐Function Calculations of Coherent Electron Transport in a Gated Si Nanowire
Author(s) -
Ko YoungJo,
Shin Mincheol,
Ha Jeong Sook,
Park Kyoung Wan
Publication year - 2000
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.00.0100.0303
Subject(s) - nanowire , conductance , electron transport chain , condensed matter physics , electron , formalism (music) , physics , fermi level , quantum , context (archaeology) , quantum wire , materials science , quantum mechanics , chemistry , art , musical , paleontology , biochemistry , visual arts , biology
We describe a detailed numerical scheme to calculate electron transport in quantum wires using the Green function formalism combined with tight‐binding orbital basis. As an example of the application, we study the electron transport in a Si nanowire containing a finite potential barrier. The effects of nonzero bias, temperature, and disorder on the barrier‐induced oscillatory conductance are investigated within the context of coherent transport model. The oscillatory behavior of the conductance as a function of the Fermi energy is found to be highly sensitive to sample disorder and limited to a very low temperature and a small bias range.