Open AccessStudy on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode
Author(s) -
Jianfeng Gao,
Hong Seon Yang
Publication year - 2015
Publication title -
journal of nanomedicine and nanotechnology
Language(s) - English
Resource type - Journals
ISSN - 2157-7439
DOI - 10.4172/2157-7439.s7-005
Subject(s) - materials science , tin , electrode , chemical vapor deposition , metal , deposition (geology) , oxide , metal gate , optoelectronics , plasma , tin oxide , gate oxide , voltage , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , transistor , electrical engineering , organic chemistry , physics , quantum mechanics , engineering , paleontology , sediment , biology