Open AccessOptimering van die plasmaondersteunde chemiese dampdeponering van kwartsagtige lagies by lae temperature
Author(s) -
Philip Crouse,
J. A. Bester
Publication year - 1996
Publication title -
suid-afrikaanse tydskrif vir natuurwetenskap en tegnologie
Language(s) - English
Resource type - Journals
eISSN - 2222-4173
pISSN - 0254-3486
DOI - 10.4102/satnt.v15i1.628
Subject(s) - chemical vapor deposition , biasing , plasma , materials science , physical property , nanotechnology , die (integrated circuit) , analytical chemistry (journal) , engineering physics , optoelectronics , chemistry , physics , composite material , electrical engineering , engineering , environmental chemistry , voltage , nuclear physics
Results pertaining to the plasma-assisted chemical vapour deposition (PACVD) of SiOᵪCᵧ thin films at room temperature using a self-biasing radio-frequency plasma reactor are presented. Response surface analysis was used for experimental design. A simple technique is illustrated for the optimizing of any physical property, subject to the constraints imposed by the apparatus and by the required values of other physical properties
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom