Open AccessOptimering van die plasmaondersteunde chemiese dampdeponering van kwartsagtige lagies by lae temperature
Author(s) -
Philip Crouse,
J. A. Bester
Publication year - 1996
Publication title -
suid-afrikaanse tydskrif vir natuurwetenskap en tegnologie/die suid-afrikaanse tydskrif vir natuurwetenskap en tegnologie
Language(s) - English
Resource type - Journals
eISSN - 2222-4173
pISSN - 0254-3486
DOI - 10.4102/satnt.v15i1.628
Subject(s) - chemical vapor deposition , biasing , plasma , materials science , physical property , nanotechnology , die (integrated circuit) , analytical chemistry (journal) , engineering physics , optoelectronics , chemistry , physics , composite material , electrical engineering , engineering , environmental chemistry , voltage , nuclear physics
Results pertaining to the plasma-assisted chemical vapour deposition (PACVD) of SiOᵪCᵧ thin films at room temperature using a self-biasing radio-frequency plasma reactor are presented. Response surface analysis was used for experimental design. A simple technique is illustrated for the optimizing of any physical property, subject to the constraints imposed by the apparatus and by the required values of other physical properties