Open AccessPerformance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Author(s) -
Robert Kaplar,
David Russell Hughart,
Stan Atcitty,
Jack Flicker,
Sandeepan DasGupta,
Matthew Marinella
Publication year - 2013
Publication title -
additional conferences (device packaging hitec hiten and cicmt)
Language(s) - English
Resource type - Journals
ISSN - 2380-4491
DOI - 10.4071/hiten-wp11
Subject(s) - materials science , silicon carbide , mosfet , optoelectronics , threshold voltage , leakage (economics) , gate oxide , metal gate , duty cycle , trapping , stress (linguistics) , reliability (semiconductor) , electrical engineering , voltage , composite material , power (physics) , transistor , ecology , linguistics , philosophy , physics , quantum mechanics , biology , economics , macroeconomics , engineering
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