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Generation-recombination noise and other features of doped silicon in a wide temperature range
Author(s) -
Vilius Palenskis,
Justinas Glemža,
Jonas Matukas
Publication year - 2022
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/physics.v62i3.4798
Subject(s) - recombination , silicon , range (aeronautics) , atmospheric temperature range , noise (video) , doping , materials science , electron density , electron , atomic physics , acceptor , molecular physics , chemistry , optoelectronics , condensed matter physics , physics , thermodynamics , biochemistry , image (mathematics) , quantum mechanics , artificial intelligence , computer science , composite material , gene

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