Open AccessInfluence of an ultra-thin buffer layer on the growth and properties of pseudomorphic GaAsBi layers
Author(s) -
Simona Pūkienė,
Algirdas Jasinskas,
Andrea Zelioli,
Sandra Stanionytė,
Virginijus Bukauskas,
Bronislovas Čechavičius,
Evelina Dudutienė,
Renata Butkutė
Publication year - 2022
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/physics.v62i2.4742
Subject(s) - materials science , reciprocal lattice , molecular beam epitaxy , lattice (music) , diffraction , layer (electronics) , thin film , optoelectronics , relaxation (psychology) , band gap , epitaxy , stress relaxation , buffer (optical fiber) , crystallography , optics , nanotechnology , composite material , chemistry , psychology , social psychology , telecommunications , creep , physics , computer science , acoustics