Open AccessPhotoluminescence properties of GaAsBi single quantum wells with 10% of Bi
Author(s) -
Evelina Dudutienė,
Algirdas Jasinskas,
Bronislovas Čechavičius,
Ramūnas Nedzinskas,
Monika Jokubauskaitė,
Andrius Bičiūnas,
Virginijus Bukauskas,
Gintaras Valušis,
Renata Butkutė
Publication year - 2021
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/physics.v61i2.4442
Subject(s) - photoluminescence , laser linewidth , quantum well , molecular beam epitaxy , materials science , doping , recombination , spontaneous emission , intensity (physics) , condensed matter physics , spectroscopy , optoelectronics , epitaxy , molecular physics , chemistry , optics , laser , physics , nanotechnology , biochemistry , layer (electronics) , quantum mechanics , gene
A set of single quantum well (SQW) samples of GaAs 1- x Bi x with x ~ 0.1 and p -doped GaAs barriers grown by molecular beam epitaxy was investigated by the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, a smooth surface and sharp interfaces between the layers and exhibited a high PL intensity and a lower than 100 meV PL linewidth of QW structures. Temperature dependence of the optical transition energy was S-shape-free for all investigated structures and it was weaker than that of GaAs. An analysis of the carrier recombination mechanism was also carried out indicating that the radiative recombination is dominant even at room temperature. Moreover, numerical calculations revealed that a higher Be doping concentration leads to an increased overlap of the electron and heavy hole wave functions and determines a higher PL intensity.