Open AccessQuantum paraelectricity and induced ferroelectricity by germanium doping of (PbySn1–y)2P2S(Se)6 single crystals
Author(s) -
I. Zamaraitė,
A. Džiaugys,
Yulian M. Vysochanskii,
J. Banys
Publication year - 2020
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/physics.v60i2.4227
Subject(s) - dielectric , doping , ferroelectricity , permittivity , materials science , germanium , condensed matter physics , dielectric permittivity , quantum chemical , analytical chemistry (journal) , chemistry , physics , molecule , optoelectronics , silicon , chromatography , organic chemistry
In this paper we report a dielectric study on four single crystals Pb 2 P 2 S 6 , (Pb 0.9 8Ge 0.02 ) 2 P 2 S 6 , (Pb 0.7 Sn 0.3 ) 2 P 2 S 6 + 5% Ge and (Pb 0.7 Sn 0.3 ) 2 P 2 Se 6 + 5% Ge down to 20 K. A new quantum paraelectric state was reported in the Ge-doped samples at low temperatures. In all of these materials the non-classical T 2 temperature dependences of inverse dielectric permittivity were observed. The dielectric constants of Pb 2 P 2 S 6 -based single crystals were measured between 20 and 300 K. The temperature dependences of dielectric permittivity were analysed on the basis of Barrett’s model as a signature of quantum paraelectricity.