Open AccessAn accurate analytical model for nonequilibrium drift-velocity and chord-mobility of In0.53Ga0.47As
Author(s) -
Eva María Olmedo Moreno,
L. Varani
Publication year - 2018
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/physics.v58i2.3746
Subject(s) - saturation velocity , drift velocity , chord (peer to peer) , electric field , electron mobility , monte carlo method , mobility model , velocity saturation , electron , computational physics , statistical physics , semiconductor , electronic circuit , non equilibrium thermodynamics , computer science , physics , voltage , optoelectronics , transistor , mathematics , mosfet , quantum mechanics , telecommunications , distributed computing , statistics
Mobility models are an essential tool for an accurate description of the charge carrier dynamics in semiconductor materials and devices. By means of a simulator based on the Monte Carlo method which has been properly validated, a set of velocity and chord-mobility data was generated for electrons and holes in In 0.53 Ga 0.47 As bulk material as a function of electric field and for different concentrations of donors and acceptors. This set has been used to build an accurate velocity and chord-mobility analytical model, the mathematical simplicity of which represents a significant advantage because it provides necessary values by a rapid calculation process without forgoing accuracy. The model can be easily implemented in compact numerical simulations of electronic devices and associated circuits where a fast recovery of the velocity and mobility values corresponding to the local electric field and doping concentration is needed.