Open AccessNeutron irradiation influence on mobility and compensation of dark conductivity in silicon
Author(s) -
J. Vaitkus,
Algirdas Mekys,
Vytautas Rumbauskas,
J. Storasta
Publication year - 2016
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/physics.v56i2.3306
Subject(s) - fluence , materials science , magnetoresistance , irradiation , electron mobility , silicon , acceptor , neutron , semiconductor , band gap , condensed matter physics , conductivity , hall effect , electrical resistivity and conductivity , optoelectronics , chemistry , nuclear physics , physics , magnetic field , quantum mechanics
The electrical properties of the neutron irradiated Si were analysed by means of the Hall effect and magnetoresistance temperature dependence. It was demonstrated that the electron mobility decreased with increasing the neutron fluence in a wide fluence range, and the microinhomogeneities in samples caused differences between the mobility values from the measured Hall and magnetoresistance effects. Exploiting the magnetoresistance mobility temperature dependence, the free carrier concentration dependence on temperature was analysed. It was found that the neutron irradiation introduced deep levels in the upper part of the bandgap, but their contribution decreased with increasing the neutron fluence – that is explained by more effective generation of acceptor type levels in the middle or lower part of the bandgap. The activation energy of the free carrier concentration did not follow the homogeneous semiconductor model, so the dark conductivity origin, that is related to the modified cluster model and cluster environment, was proposed.