Open AccessPhotoluminescence lifetimes in GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As structures designed for microwave and terahertz detectors
Author(s) -
Aurimas Čerškus,
J. Kundrotas,
Viktorija Nargelienė,
Algirdas Sužiedėlis,
S. Ašmontas,
Jonas Gradauskas,
Erik Johannessen,
Agnė Johannessen
Publication year - 2013
Publication title -
lithuanian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.269
H-Index - 16
eISSN - 2424-3647
pISSN - 1648-8504
DOI - 10.3952/lithjphys.53206
Subject(s) - photoluminescence , homojunction , exciton , materials science , optoelectronics , microwave , carrier lifetime , heterojunction , physics , condensed matter physics , silicon , quantum mechanics
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