Open AccessValleytronics in Two-dimensional Materials
Author(s) -
Hyejin Ryu
Publication year - 2020
Publication title -
mulrihag gwa cheomdan gisul
Language(s) - English
Resource type - Journals
ISSN - 1225-2336
DOI - 10.3938/phit.29.022
Subject(s) - valleytronics , spintronics , realization (probability) , spin (aerodynamics) , degrees of freedom (physics and chemistry) , transistor , electronics , nanotechnology , physics , computer science , electrical engineering , materials science , voltage , condensed matter physics , engineering , mathematics , quantum mechanics , ferromagnetism , statistics , thermodynamics
A new type of degree of freedom in terms of valley symmetry has recently emerged, allowing an additional control, in addition to the traditional controls of the charge and the spin degrees of freedom, which are widely used in transistors and in spintronic devices, respectively. Valleytronics is a new type of electronics having great potential for faster and more efficient information processing and for high-density data storage in next-generation devices. Two-dimensional materials are considered to be ideal systems for investigating valleytronics due to many systems having two distinguishable valleys of opposite spin textures. In this article, we demonstrate the fundamental properties related to the valley degree of freedom in two-dimensional materials and its potential applications for valleytronic devices.