Open AccessDevice performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors
Author(s) -
Dong Geun Lee,
Hwan Chul Yoo,
Eun-Ki Hong,
Won-Ju Cho,
Jong-Tae Park
Publication year - 2020
Publication title -
aims materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.367
H-Index - 16
eISSN - 2372-0484
pISSN - 2372-0468
DOI - 10.3934/matersci.2020.5.596
Subject(s) - thin film transistor , materials science , active layer , passivation , amorphous solid , layer (electronics) , optoelectronics , transistor , stress (linguistics) , degradation (telecommunications) , sputtering , thin film , composite material , nanotechnology , electronic engineering , electrical engineering , crystallography , chemistry , linguistics , philosophy , voltage , engineering