z-logo
open-access-imgOpen Access
Control of the spontaneous formation of oxide overlayers on GaP nanowires grown by physical vapor deposition
Author(s) -
Yunyan Wang,
Manu Hegde,
Shuoyuan Chen,
Penghui Yin,
Pavle V. Radovanovic
Publication year - 2018
Publication title -
aims materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.367
H-Index - 16
eISSN - 2372-0484
pISSN - 2372-0468
DOI - 10.3934/matersci.2018.1.105
Subject(s) - nanowire , materials science , atomic layer deposition , raman spectroscopy , gallium phosphide , oxide , chemical engineering , nanotechnology , chemical vapor deposition , hydrogen , layer (electronics) , optoelectronics , chemistry , metallurgy , optics , engineering , physics , organic chemistry

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here