Investigating the effect of self-trapped holes in the current gain mechanism of β−Ga2O3 Schottky diode photodetectors | Zendy

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Investigating the effect of self-trapped holes in the current gain mechanism of β−Ga2O3 Schottky diode photodetectors

Author(s) -

Fatih Akyol

Publication year - 2021

Publication title -

turkish journal of physics

Language(s) - English

Resource type - Journals

eISSN - 1303-6122

pISSN - 1300-0101

DOI - 10.3906/fiz-2102-12

Subject(s) - physics , schottky barrier , crystallography , condensed matter physics , optoelectronics , diode , chemistry

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