
Influence of doping and heat treatments on carriers mobility in polycrystalline silicon thin films for photovoltaic application
Author(s) -
B. Zaidi,
BOUZID HADJOUDJA,
HOUDA FELFLI,
ALLAOUA CHIBANI
Publication year - 2011
Publication title -
turkish journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.169
H-Index - 26
eISSN - 1303-6122
pISSN - 1300-0101
DOI - 10.3906/fiz-1012-61
Subject(s) - materials science , doping , polycrystalline silicon , electron mobility , silicon , boron , optoelectronics , arsenic , crystallite , charge carrier , carrier lifetime , saturation velocity , nanotechnology , electrical engineering , thin film transistor , metallurgy , chemistry , voltage , transistor , layer (electronics) , organic chemistry , engineering