Open AccessInfluence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) based Schottky diodes
Author(s) -
İlker Ay,
Hüseyin Tolunay
Publication year - 2010
Publication title -
turkish journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.169
H-Index - 26
eISSN - 1303-6122
pISSN - 1300-0101
DOI - 10.3906/fiz-0908-42
Subject(s) - materials science , schottky diode , nitrogen , silicon nitride , amorphous solid , analytical chemistry (journal) , diode , nitride , dielectric , amorphous silicon , equivalent series resistance , silicon , optoelectronics , crystalline silicon , nanotechnology , chemistry , crystallography , electrical engineering , organic chemistry , chromatography , layer (electronics) , engineering , voltage
doi:10.3906/fiz-0908-42 Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diode