Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) based Schottky diodes | Zendy

İlker Ay | Zendy; Hüseyin Tolunay | Zendy

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Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) based Schottky diodes

Author(s) -

İlker Ay,

Hüseyin Tolunay

Publication year - 2010

Publication title -

turkish journal of physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.169

H-Index - 26

eISSN - 1303-6122

pISSN - 1300-0101

DOI - 10.3906/fiz-0908-42

Subject(s) - materials science , schottky diode , nitrogen , silicon nitride , amorphous solid , analytical chemistry (journal) , diode , nitride , dielectric , amorphous silicon , equivalent series resistance , silicon , optoelectronics , crystalline silicon , nanotechnology , chemistry , crystallography , electrical engineering , organic chemistry , chromatography , layer (electronics) , engineering , voltage

doi:10.3906/fiz-0908-42 Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diode

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