Open AccessSimulation of storage time versus reverse bias current for p^+n and pin diodes
Author(s) -
M. Serhat Keserlıoğlu,
H. H. Erkaya
Publication year - 2011
Publication title -
turkish journal of electrical engineering and computer sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.225
H-Index - 30
eISSN - 1303-6203
pISSN - 1300-0632
DOI - 10.3906/elk-0812-29
Subject(s) - diode , resistor , transient (computer programming) , reverse bias , current (fluid) , step recovery diode , matlab , pin diode , semiconductor device , materials science , solver , optoelectronics , semiconductor , voltage , electrical engineering , computer science , engineering , schottky diode , layer (electronics) , composite material , programming language , operating system
doi:10.3906/elk-0812-29 Simulation of storage time versus reverse bias current for p + n and pin diode
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