Open AccessResearch Progress of Material Removal Mechanism in Chemical Mechanical Planarization for Metal Interconnection Layer of Chips
Author(s) -
超精细平坦化 互连层金属和芯片结构中的其他材料性质差异较大,
其平坦化过程更加依赖于抛光浆料中的化学组分,
。 基于此,
综述重点介绍了研究研磨粒子微观状态和作用的接触机制和其相关模型的发展 并分别阐述了氧化,
以满足不同工况条件下所需的材料去除速率 超精细平,
Tao Hang,
Pengfei Chang,
Ming Li
Publication year - 2022
Publication title -
journal of mechanical engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.342
H-Index - 50
ISSN - 0577-6686
DOI - 10.3901/jme.2022.02.147
Subject(s) - chemical mechanical planarization , interconnection , layer (electronics) , mechanism (biology) , materials science , nanotechnology , computer science , telecommunications , physics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom