Open AccessEffects of Vacancy and Boron Doping on Si Adsorption on Graphene
Author(s) -
Xianqi Dai,
河南 新乡 河南师范大学物理与信息工程学院,
Yanhui Li,
Jianhua Zhao,
Tang Ya-Nan
Publication year - 2011
Publication title -
wuli huaxue xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.396
H-Index - 37
ISSN - 1000-6818
DOI - 10.3866/pku.whxb20110224
Subject(s) - graphene , vacancy defect , boron , doping , materials science , adsorption , nanotechnology , chemical physics , chemical engineering , condensed matter physics , optoelectronics , chemistry , physics , organic chemistry , engineering