GROWTH AND INVESTIGATION OF EPITAXIAL GABIAS LAYERS / EPITAKSINIŲ GABIAS SLUOKSNIŲ AUGINIMAS IR SAVYBIŲ TYRIMAS | Zendy

Andrius Ruseckas | Zendy; Renata Butkutė | Zendy; K. Bertulis | Zendy; L. Dapkus | Zendy; V. Pačebutas | Zendy

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GROWTH AND INVESTIGATION OF EPITAXIAL GABIAS LAYERS / EPITAKSINIŲ GABIAS SLUOKSNIŲ AUGINIMAS IR SAVYBIŲ TYRIMAS

Author(s) -

Andrius Ruseckas,

Renata Butkutė,

K. Bertulis,

L. Dapkus,

V. Pačebutas

Publication year - 2011

Publication title -

mokslas - lietuvos ateitis

Language(s) - English

Resource type - Journals

eISSN - 2029-2341

pISSN - 2029-2252

DOI - 10.3846/mla.2011.011

Subject(s) - van der pauw method , molecular beam epitaxy , monocrystalline silicon , epitaxy , hall effect , materials science , substrate (aquarium) , band gap , analytical chemistry (journal) , diffraction , thin film , chemistry , optoelectronics , optics , electrical resistivity and conductivity , nanotechnology , silicon , layer (electronics) , physics , oceanography , quantum mechanics , chromatography , geology

In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs layers was investigated. Thin Ga-BiAs layers have been grown by molecular beam epitaxy tech-nology on monocrystalline GaAs substrates. The surface mor-phology of GaBiAs layers and formation of Bi droplets were examined using atomic force microscopy. The lattice parameters of GaBiAs and Bi concentration have been evaluated from high resolution X-ray diffraction ∆(2Θ)spektra. Optical measurements showed the reduction of energy band gap from 1.15 to 0.86 eV for GaBiAs layers with 4.4 and 11.3% of Bi concentration. From the Hall effect measurements using Van der Pauw geometry the highest carrier concentration 3.2∙1015 was measured for GaBiAs layers containing 11.3% of Bi.

Article in Lithuanian

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