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GROWTH AND INVESTIGATION OF EPITAXIAL GABIAS LAYERS / EPITAKSINIŲ GABIAS SLUOKSNIŲ AUGINIMAS IR SAVYBIŲ TYRIMAS
Author(s) -
Andrius Ruseckas,
Renata Butkutė,
K. Bertulis,
L. Dapkus,
V. Pačebutas
Publication year - 2011
Publication title -
mokslas - lietuvos ateitis
Language(s) - English
Resource type - Journals
eISSN - 2029-2341
pISSN - 2029-2252
DOI - 10.3846/mla.2011.011
Subject(s) - van der pauw method , molecular beam epitaxy , monocrystalline silicon , epitaxy , hall effect , materials science , substrate (aquarium) , band gap , diffraction , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , electrical resistivity and conductivity , silicon , optics , layer (electronics) , physics , oceanography , chromatography , geology , quantum mechanics

In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs layers was investigated. Thin Ga-BiAs layers have been grown by molecular beam epitaxy tech-nology on monocrystalline GaAs substrates. The surface mor-phology of GaBiAs layers and formation of Bi droplets were examined using atomic force microscopy. The lattice parameters of GaBiAs and Bi concentration have been evaluated from high resolution X-ray diffraction ∆(2Θ)spektra. Optical measurements showed the reduction of energy band gap from 1.15 to 0.86 eV for GaBiAs layers with 4.4 and 11.3% of Bi concentration. From the Hall effect measurements using Van der Pauw geometry the highest carrier concentration 3.2∙1015 was measured for GaBiAs layers containing 11.3% of Bi.

Article in Lithuanian

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