INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS | Zendy

Vytautas Bleizgys | Zendy; Andrius Platakis | Zendy

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INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS

Author(s) -

Vytautas Bleizgys,

Andrius Platakis

Publication year - 2010

Publication title -

mokslas - lietuvos ateitis

Language(s) - English

Resource type - Journals

eISSN - 2029-2341

pISSN - 2029-2252

DOI - 10.3846/mla.2010.013

Subject(s) - insulated gate bipolar transistor , bipolar junction transistor , transistor , heterostructure emitter bipolar transistor , materials science , multiple emitter transistor , static induction transistor , common emitter , gate driver , current injection technique , electrical engineering , optoelectronics , gate turn off thyristor , bipolar transistor biasing , voltage , gate oxide , threshold voltage , engineering

The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.

Article in Lithuanian

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