Open AccessINVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS
Author(s) -
Vytautas Bleizgys,
Andrius Platakis
Publication year - 2010
Publication title -
mokslas - lietuvos ateitis
Language(s) - English
Resource type - Journals
eISSN - 2029-2341
pISSN - 2029-2252
DOI - 10.3846/mla.2010.013
Subject(s) - insulated gate bipolar transistor , bipolar junction transistor , transistor , heterostructure emitter bipolar transistor , materials science , multiple emitter transistor , static induction transistor , common emitter , gate driver , current injection technique , electrical engineering , optoelectronics , gate turn off thyristor , bipolar transistor biasing , voltage , gate oxide , threshold voltage , engineering
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.
Article in Lithuanian