Open AccessAnalytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET
Author(s) -
T. S. Arun Samuel,
N Arumugam,
Theodore Chandra S
Publication year - 2014
Publication title -
ecti transactions on electrical eng. / electronics and communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.148
H-Index - 7
ISSN - 1685-9545
DOI - 10.37936/ecti-eec.2017152.171311
Subject(s) - gallium nitride , electric field , optoelectronics , poisson's equation , transistor , tunnel field effect transistor , technology cad , logic gate , materials science , computational physics , field effect transistor , physics , electronic engineering , nanotechnology , engineering , quantum mechanics , voltage , layer (electronics) , engineering drawing , cad
In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Approximation Technique. The analytical model includes the calculation of the surface potential, lateral electric field and vertical electric field. Finally the drain current is extracted by using Kane’s model. The device simulations are carried out using 2-D device simulator, Technology Computer Aided Design (TCAD). The model can be used to study the impact of GaN based SG TFET and GAA TFET in terms of higher ON current characteristics. The results expected by the model are compared with those obtained by 2-D simulation to verify the accuracy of the proposed analytical model.