Open AccessImpact of Strain on Fully Depleted Strained Gate Stack Double Gate MOSFET: A Simulation Study
Author(s) -
Sushanta Kumar Mohapatra,
K P Pradhan,
Prasanna Kumar Sahu,
Saradiya Kishor Parija
Publication year - 2015
Publication title -
ecti transactions on electrical eng. / electronics and communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.148
H-Index - 7
ISSN - 1685-9545
DOI - 10.37936/ecti-eec.2015132.171029
Subject(s) - transconductance , materials science , threshold voltage , mosfet , optoelectronics , conductance , ion , voltage , mole fraction , subthreshold conduction , subthreshold slope , electrical engineering , transistor , engineering , chemistry , physics , condensed matter physics , organic chemistry
The fusion of strain engineering and multigate technology is implemented to design an advanced MOSFET model i.e. Fully Depleted Strained Gate Stack Double Gate (FD-S-GS-DG) in nanoscale regime. Both DC and Analog performances of FD-S-GS-DG are analyzed by varying the Ge mole fraction (X). The sensitivity of crucial device parameters like threshold voltage (Vth), subthreshold swing (SS), on-current (Ion), off state leakage current (Ioff), on-off ratio (Ion/Ioff), transconductance (gm), output conductance (gd), early voltage (VEA), gain (AV), transconductance generation factor (TGF) towards X are successfully evaluated and presented. From the obtained results, by considering appropriate value of X, one can enhance the device performance by an immense aspect.