Open AccessLow-Temperature Micro-PL Measurements of InAs Binary Quantum Dots on GaAs Substrate
Author(s) -
Nan Thidar Chit Swe,
S. Suraprapapich,
C. Wissawintha,
Somsak Panyakeow,
C. W. Tu,
Yasuhiko Arakawa
Publication year - 2007
Publication title -
ecti transactions on electrical eng. / electronics and communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.148
H-Index - 7
ISSN - 1685-9545
DOI - 10.37936/ecti-eec.200862.171778
Subject(s) - photoluminescence , quantum dot , excitation , materials science , polarization (electrochemistry) , spectroscopy , substrate (aquarium) , binary number , optoelectronics , photoluminescence excitation , spectral line , condensed matter physics , molecular physics , chemistry , physics , oceanography , arithmetic , mathematics , quantum mechanics , geology , astronomy
Optical properties of InAs binary quantum dot (bi-QD) molecules grown on the (001) GaAs substrate were measured by means of temperature- and excitation-power-dependent photoluminescence (PL) spectroscopy. It was observed that the shape and peak position of the PL spectra changed with the temperature and with the excitation power. It was also found that the linear polarization degree of the bi-QD PL signal changed with temperature. The temperature-dependent PL described that the linear polarization degree of bi-QDs is closely related to the carrier dynamics.