Open AccessOptimized Ion Implantation Profiles for the p-n Junction Using Forth Moment Approach for Application in High Frequency VLSI Circuits
Author(s) -
Naresh Agrawal,
R. K. Parida,
G. N. Dash,
А. К. Панда
Publication year - 2008
Publication title -
ecti transactions on electrical eng. / electronics and communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.148
H-Index - 7
ISSN - 1685-9545
DOI - 10.37936/ecti-eec.200862.171774
Subject(s) - ion implantation , diode , doping , optoelectronics , p–n junction , materials science , ion , microwave , moment (physics) , electronic circuit , impurity , electrical engineering , semiconductor , chemistry , physics , computer science , telecommunications , engineering , organic chemistry , classical mechanics
The ion implantation based impurity doping profile across a p-n junction can be represented accurately using Pearson's fourth moment approach. The high-frequency characteristics of the reverse biased p-n junction (IMPATT diodes) are computed using different ion implantation profiles. It has been observed that the microwave properties of IMPATT diodes are very sensitive to the change in doping profiles. The optimized ion implantation profiles are suggested for different frequency bands to fabricate the reverse biased p-n junction for application in high-frequency circuits.