Open AccessThin film preparation of silicon nanocrystals embedded in silicon oxide by sol-gel method
Author(s) -
Thipwan Fangsuwannarak,
Kanika Khunchana
Publication year - 1970
Publication title -
ecti transactions on computer and information technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.132
H-Index - 2
ISSN - 2286-9131
DOI - 10.37936/ecti-cit.201481.54382
Subject(s) - materials science , silicon , sol gel , raman spectroscopy , annealing (glass) , crystallite , silicon oxide , fourier transform infrared spectroscopy , silicon dioxide , nanocrystalline silicon , analytical chemistry (journal) , infrared spectroscopy , chemical engineering , nanotechnology , crystalline silicon , optics , optoelectronics , chemistry , chromatography , composite material , organic chemistry , metallurgy , silicon nitride , physics , engineering , amorphous silicon
In this paper, nano silicon powders were prepared by the grinding technique and subsequently mixed in sol-gel of Tetraethylorthosilicate and ethanol solution. The silicon dioxide films synthesized from the sol-gel solution were preliminary studied in the term of the optical property as a refractive index (n) by varying the aging time and annealing temperatures. By using a Fourier transform infrared spectroscopy technique, the obtained x-composition values of the SiOx films were extended from 1.67 to 1.98 with a decreasing time of the aged sol-gels. In addition, the lower x-composition value can be controlled by increasing the annealing temperatures from 60◦C to 500◦C. The prepared films from the precursor of nano-silicon powder suspension were characterized by photoemission spectroscopy and Raman spectroscopy in order to obtain more understanding of the chemical composition and silicon nano-crystallite quality, respectively. Presenting the spectra broadening and the frequency downshifting from 521 cm−1 was caused by the quantum size effect.