Open AccessDrain Current Characteristics of Carbon-nanotube FET (CNTFET) with ๐บ๐๐ถ๐,Zr๐ถ๐ and Hf๐ถ๐ as Dielectric Materials using FETToy Code
Author(s) -
Tijjani Adam,
G. S. M. Galadanci,
Garba Babaji
Publication year - 2020
Publication title -
nipes journal of science and technology research
Language(s) - English
Resource type - Journals
ISSN - 2682-5821
DOI - 10.37933/nipes/2.2.2020.22
Subject(s) - materials science , carbon nanotube field effect transistor , carbon nanotube , transconductance , optoelectronics , transistor , drain induced barrier lowering , nanotube , dielectric , nanotechnology , threshold voltage , field effect transistor , channel length modulation , electrical engineering , voltage , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom