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Methods For Generation Of Cluster Particles Of Different Stochiometry
Author(s) -
Khozhiev Sh.T.,
I.O. Kosimov,
D.M. Murodkobilov,
B.B. Gaibnazarov,
Bekmirzaev. J.N.,
Lukmonjon Mutalliev
Publication year - 2020
Publication title -
the american journal of applied sciences
Language(s) - English
Resource type - Journals
ISSN - 2689-0992
DOI - 10.37547/tajas/volume02issue12-22
Subject(s) - cluster (spacecraft) , fragmentation (computing) , oxide , chemical physics , polymer , silicon oxide , materials science , silicon , ion , semiconductor , decomposition , catalysis , nanotechnology , chemistry , computer science , optoelectronics , organic chemistry , silicon nitride , metallurgy , composite material , programming language , operating system
The main purpose from this paper, in semiconductor technology silicon oxide is to study notable of the surface and catalysis process. As a result, cluster fragmentation processes, we obtained information about the emission of the clusters and the chemical and physical properties of the clusters. We found during the study that oxide clusters are heterogeneous clusters. In heterogeneous clusters, the bonds in the main chain are different from the bonds in the side chain, as in organic polymers. We tried to prove on the basis of the analysis of experimental data that the formation, excitation and molecular decomposition of SinO2n + 1Hk- (k = 1-3) cluster ions are based on the model of the combinatorial synthesis mechanism.

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