Open AccessComparative Investigation of Interfacial Characteristics between HfO2/Al2O3 and Al2O3/HfO2 Dielectrics on AlN/p-Ge Structure
Author(s) -
Hogyoung Kim,
Hee Ju Yun,
Seok Cheol Choi,
Byung Joon Choi
Publication year - 2019
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2019.29.8.463
Subject(s) - materials science , dielectric , atomic layer deposition , analytical chemistry (journal) , capacitance , high κ dielectric , layer (electronics) , optoelectronics , nanotechnology , chemistry , electrode , chromatography
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