Open AccessRemoval of Interface State Density of SiO2/Si Structure by Nitric Acid Oxidation Method
Author(s) -
최재영,
김도연,
김우병,
Jae-Ho Choi,
Doyeon Kim,
WooByoung Kim
Publication year - 2018
Publication title -
han'gug jaeryo haghoeji/han-guk jaeryo hakoeji
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2018.28.2.118
Subject(s) - materials science , suboxide , annealing (glass) , plasma enhanced chemical vapor deposition , chemical vapor deposition , nitric acid , hydrogen , dangling bond , analytical chemistry (journal) , current density , chemical engineering , silicon , composite material , nanotechnology , optoelectronics , metallurgy , chemistry , organic chemistry , engineering , physics , quantum mechanics