Open AccessStudy on Improvement of Etch Rate and SiO2 Regrowth in High Selectivity Phosphoric Acid Process
Author(s) -
SeungHoon Lee,
Sungwon Mo,
Yangho LEE,
JeongHyun Bae
Publication year - 2018
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2018.28.12.709
Subject(s) - wafer , etching (microfabrication) , materials science , phosphoric acid , selectivity , radius , volumetric flow rate , thin film , dry etching , analytical chemistry (journal) , etch pit density , nanotechnology , chemical engineering , layer (electronics) , metallurgy , chemistry , chromatography , organic chemistry , computer science , engineering , catalysis , physics , computer security , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom