Open AccessImproving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition
Author(s) -
Hogyoung Kim,
Min Soo Kim,
Sung Yeon Ryu,
Byung Joon Choi
Publication year - 2017
Publication title -
han'gug jaeryo haghoeji/han-guk jaeryo hakoeji
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2017.27.7.362
Subject(s) - materials science , thermionic emission , schottky diode , diode , atomic layer deposition , optoelectronics , schottky barrier , insulator (electricity) , semiconductor , metal , layer (electronics) , analytical chemistry (journal) , electron , nanotechnology , chemistry , physics , quantum mechanics , chromatography , metallurgy